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MDD 312
High Power Diode Modules
VRSM VDSM V 1300 1500 1700 1900 2100 2300 Symbol IFRMS IFAVM IFSM VRRM VDRM V 1200 1400 1600 1800 2000 2200 Type
3 1 2
IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V
3 2
MDD MDD MDD MDD MDD MDD
312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Maximum Ratings 520 310 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 10500 11200 9200 9800 551000 527000 423 000 403 000 -40...+150 150 -40...+125 A A A A A A A2 s A2 s A2s A2s C C C V~ V~
1
Conditions TVJ = TVJM TC = 100C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0
Features * International standard package * Direct copper bonded Al2O3-ceramic with copper base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered E 72873 Applications * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Advantages * Simple mounting * Improved temperature and power cycling * Reduced protection circuits Dimensions in mm (1 mm = 0.0394")
M8x20
i2dt
TVJ = 45C VR = 0 TVJ = TVJM VR = 0
TVJ TVJM Tstg VISOL Md Weight Symbol IRRM VF VT0 rT RthJC RthJK QS IRM dS dA a 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s
3000 3600
Mounting torque (M6) Terminal connection torque (M8) Typical including screws Conditions TVJ = TVJM; VR = VRRM IF = 600 A; TVJ = 25C For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module TVJ = 125C; IF = 400 A; -di/dt = 50 A/s Creeping distance on surface Creepage distance in air Maximum allowable acceleration
4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g Characteristic Values 30 1.32 0.8 0.6 0.12 0.06 0.16 0.08 700 260 12.7 9.6 50 mA V V m K/W K/W K/W K/W C A mm mm m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
423
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2004 IXYS All rights reserved
1-3
MDD 312
10000 106 It
2
IFSM
VR = 0 V IFAVM
A2s
A 50 Hz 80 % VRRM TVJ = 45C TVJ = 150C
550 A 500 450 400 350
8000
DC 180 sin 120 60 30
6000
TVJ = 45C
4000
300
TVJ = 150C
250 200 150
2000
100 50
0 0.001
10 0.01 0.1
5
0 1 t ms 10 0 25 50 75 100
TC
s t
1
125
150
Fig. 1 Surge overload current IFSM: Crest value, t: duration
600 Ptot W 500
Fig. 2 I2t versus time (1-10 ms)
600
RthKA K/W
Fig. 3 Maximum forward current at case temperature
A TVJ = 125C VR = 600 V
400
0.06 0.1 0.2 0.3 0.4 0.6 0.8
DC 180 sin 120 60 30
500
IRM
400 300
IF = 400 A
300
200
200 100 0 0 50 100
A/s 150
diF/dt
100
0 0 100 200 300 400 500 A 0 IFAVM 25 50 75 100 125 TA 150
200
Fig. 4 Power dissipation vs. forward current and ambient temperature (per diode)
1750 Ptot W 1500 R 1250 1000 750 500 250 0 0 100 200 300 400 500 600 A 0 IdAVM 25 50 75 100 125 TA 150 Circuit B2U 2 x MDD312 L
Fig. 5 Typ. peak reverse current IRM versus -diF/dt
25
s TVJ = 125C VR = 600 V
RthKA K/W
0.04 0.06 0.08 0.12 0.2 0.3 0.5
20
trr
15
IF = 400 A
10
5
0 0 50 100
A/s 150
200
diF/dt
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature R = resistive load, L = inductive load
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 7 Typ. recovery time trr versus -diF/dt
423
2-3
(c) 2004 IXYS All rights reserved
MDD 312
3000 W 2500 Ptot 2000 RthKA K/W
0.03 0.06 0.1 0.15 0.2 0.3 0.4
1500 Circuit B6U 3 x MDD312
1000
500
0 0 200 400 600 800 A IdAVM 0 25 50 75 100 125 TA 150
Fig. 8 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
0.20 K/W 0.15 ZthJC
RthJC for various conduction angles d: d DC 180C 120C 60C 30C
30 60 120 180 DC
RthJC (K/W) 0.120 0.128 0.135 0.153 0.185
0.10
Constants for ZthJC calculation: i 1 2 3 4
101 t s 102
Rthi (K/W) 0.0058 0.031 0.072 0.0112
ti (s) 0.00054 0.098 0.54 12
0.05
0.00 10-3
10-2
10-1
100
Fig. 9 Transient thermal impedance junction to case (per diode)
0.25 K/W 0.20 ZthJK 0.15
RthJK for various conduction angles d: d DC 180C 120C 60C 30C RthJK (K/W) 0.160 0.168 0.175 0.193 0.225
Constants for ZthJK calculation:
0.10 30 60 120 180 DC
i 1 2 3 4 5
s t 102
Rthi (K/W) 0.0058 0.031 0.072 0.0112 0.04
ti (s) 0.00054 0.098 0.54 12 12
0.05
0.00 10-3
10-2
10-1
100
101
Fig. 10Transient thermal impedance junction to heatsink (per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
423
(c) 2004 IXYS All rights reserved
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